WeEn Strengthens SST Leadership with WMSC Family of 1200-2300 V SiC Power Modules

Offers Enhanced Efficiency, Reliability and Flexibility for PFC and DC-DC SSTs applications

July 14, 2026, Shanghai, China – WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, has launched a new family of cutting-edge AC-DC and DC-DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications.
SSTs offer conversion efficiencies in the region of 98%, and over 20 high-efficiency, high-reliability modules have been developed at time of launch. These are available in an array of packages and with voltages ranging from 1200 to 2300 V, RDS(on) values as low as 1.5 mΩ and customer-specific configurations can also be created.
Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kVAC to 800 VDC in a single stage. supply the. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T).
Similarly, a wide range of half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing.
All modules in the family offer low inductance and have been developed with both design flexibility and layout simplicity in mind. They feature a pin order that both leaves space for the gate driving circuit while also considering device integration and electrical safety.
A range of options for the modules is also available, including for the direct bonded copper, case, and silicon-gel material, as well as the mount, pin type, plating and thermal-interface material pre-application service. These are available via the company’s collaborative custom design team.
Kevin Shen, President of WeEn Semiconductors, said: “We’ve launched the new WMSC modules cover roughly 90% of all SST applications and these are also ideally suited to the smart grid, renewables and other high-voltage systems. They are a significant breakthrough for the industry and offer higher switching speeds and higher breakdown voltages, which in turn allows for direct connection to the medium-voltage grid as well as reduced magnetics, higher efficiencies and simplified cooling.”
All modules are available for sampling and in production quantities. For further information on these modules, as well as on WeEn’s high-voltage (up to 2300 V) SiC power ICs and its collaborative custom design offering, please visit ween-semi.com.
Device
Breakdown Voltage
RDS(on)
Application
INPC modules include
WMSC5R0N17B3T
1700 V
5.0 mΩ
Multi-purpose half-bridge B3 modules include
WMSC5R0HS23B3T
2300 V
AC side
WMSC5R0F23B3T
2300 V
AC side, LLC/DAB Primary
WMSC3R0F15B3T
1500 V
LLC/DAB Primary
WMSC3R0F12B3T
1200 V
LLC/DAB Secondary
WMSC2R4F12B3T
1200 V
LLC/DAB Secondary
Half-bridge B2 Modules include
WMSC4R0H23B2N
2300 V
4.0 mΩ
LLC/DAB Secondary
WMSC4R8H23B2N-D
2300 V
4.8 mΩ
LLC/DAB Secondary
WMSC6R0H12B2N-D
2300 V
6.0 mΩ
LLC/DAB Secondary
Half-bridge 62 mm module (screw mount) include
WMSC2R7H23T2
2300 V
2.7 mΩ
AC side
WMSC2R7H17T2N-D
1700 V
2.7 mΩ
LLC/DAB Primary
WMSC7R5H17T2N-D
1700 V
7.5 mΩ
LLC/DAB Secondary
WMSC1R9H12T2
1200 V
1.9 mΩ
LLC/DAB Secondary
WMSC1R9H12T2N
1200 V
1.9 mΩ
LLC/DAB Secondary
High-power half-bridge modules (PCB mount) include
WMSC1R5H12B3S
1200 V
1.5 mΩ
LLC/DAB Secondary
WMSC2R3H12B3S
1200 V
2.3 mΩ
LLC/DAB Secondary
WMSC4R0H12B2S
1200 V
4.0 mΩ
LLC/DAB Secondary
WMSC4R0H12B2S-D
1200 V
4.0 mΩ
LLC/DAB Secondary
WMSC4R0H12B2T-D
1200 V
4.0 mΩ
LLC/DAB Secondary
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