Infineon to Build World’s First High-Volume 300 mm GaN Power Fab in Europe
Investment of around €1.1 billion in the Villach site as a global competence center for power semiconductors Next-generation power semiconductors...
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Infineon to Build World’s First High-Volume 300 mm GaN Power Fab in Europe
Investment of around €1.1 billion in the Villach site as a global competence center for power semiconductors Next-generation power semiconductors...
Read moreDetails
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