There are some specifications of transistors which are given below,
- Maximum collector dissipation (PC) is the maximum value of power dissipated in collector of a transistor.
- Transistor frequency at which the common emitter forward current gain is unity and denoted by FT. its significances is that the product of gain and bandwidth equal the transition frequency.
- Collector-emitter voltage (VCEO) is the maximum that can be applied across the collector and emitter of a collector.
- Collector current is the maximum value of collector current that a transistor can handle safely.
- Collector-base voltage (VCB) is the maximum voltage that can be applied across the base and collector of a transistor.
- Collector saturation voltage is the collector-emitter voltage of a transistor that is fully conducting.
- Collector cut-off current (ICEO) is the reverse saturation current flowing between collector and emitter with base open.
- Collector-to-base breakdown voltage is the maximum value of allowable reverse voltage that can be applied across the collector and base of a transistor with emitter open.
- Forward current gain is the maximum value of forward current of a transistor in CE configuration.
- Emitter–to-base breakdown voltage is the maximum value of allowable voltage that can be applied across the emitter to base of transistor with collector open.
