Infineon CoolGaN™ Transistors G5 are adopted by Chicony Power supplying high-power adapters to leading notebook manufacturers

Munich, Germany – 6 March 2026 — Infineon Technologies AG FSE: IFX / OTCQX: IFNNY) today announced that Chicony Power, the worldwide leading notebook adapter manufacturer, has selected the company’s CoolGaN™ Transistors G5 to power multiple laptop adapters designed for a top customer’s notebooks. The design demonstrates how GaN power semiconductors are accelerating the transition to more compact, energy-efficient charging solutions, enabling smaller form factors and improved sustainability for mainstream computing.

At the heart of the new adapter design are Infineon’s CoolGaN Transistors G5, engineered for fast switching and low conduction losses across wide operating conditions. Infineon’s high-voltage (HV) GaN transistors feature a high-performance foundational design called hybrid-drain GIT (Gate Injection Transistor), that provides the most rugged HV gate functionality, superior dynamic Rdson & hard switching performance and much higher saturation current all resulting in best overall reliability. Building upon this foundation, Infineon’s newest HV family, the G5 transistors, features up to 30% better performance in standard figures-of-merit, e.g. R_DS(on)*Qg, compared to its predecessor.

“The CoolGaN Transistors G5 embody our commitment to reliable, high-performance power semiconductors. Partnering with Chicony Power on the top customer’s adapter underscores how GaN enables tangible end-user benefits – smaller size, faster charging, and lower energy consumption – without compromising robustness,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon.

“Infineon’s CoolGaN Transistors G5 give us the design headroom to push power density and efficiency into a compact footprint. This collaboration helps deliver charging solutions aligned with the premium user experience our notebook customers expect,” said Yang Wang, VP R&D of Chicony Power.

Engineering highlights driven by Chicony Power design capabilities with use of Infineon’s HV G5 GaN transistors include a high frequency power architecture with optimized PFC and DC/DC stages leveraging GaN’s fast switching feature, an EMI-aware design whereby layout, filtering, and switching profiles are tuned to deliver low noise and strong compliance margins, and thermal optimization enabling cooler operation and sustained output at 100-300 W in compact mechanical envelopes.

Infineon has a strong portfolio with more than 40 new GaN product announcements in the last year and is a preferred partner for customers seeking high-quality GaN solutions. The company is on track with its implementation of scalable GaN manufacturing on 300-millimeter wafers with first samples already being shipped to customers. 300 mm GaN enables higher production capacity and faster delivery of high-quality GaN products which further strengthens Infineon’s position in the GaN market.

Availability

For more information on Infineon’s newest GaN Transistors, the G5 series, visit our website.