Infineon expands CoolSiC™ portfolio with 400 V and 440 V MOSFETs for high-power and compute-intensive applications

Munich, Germany – 30 September 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has expanded its CoolSiC™ MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package as well as the TO-247-3 and TO-247-4 packages. In addition, three new products in the TOLL package have been introduced, with rated voltages of 440 V (continuous) and 455 V (transient). The new CoolSiC MOSFETs deliver improved thermal performance, system efficiency, and power density. They have been specifically designed to meet the requirements of high-power and compute-intensive applications, including AI server power supplies, solar inverters, uninterruptible power supplies, Class D audio amplifiers, motor drives, and solid-state circuit breakers. For these critical systems, the devices provide the required reliability and performance.

Compared to existing Si technologies in the 250 V and 300 V voltage classes, CoolSiC G2 400 V and 440 V MOSFETs achieve up to 50 percent lower conduction losses at an operating temperature of 120 °C, thanks to their flat R(DS(on) as a function of junction temperature (Tj). They also feature significantly improved switching figures of merit, resulting in at least five times lower reverse recovery charge. At the system level, CoolSiC G2 400 V and 440 V MOSFETs in a three-stage flying-capacitor CCM totem-pole PFC achieved up to 0.4 percentage points higher peak PSU efficiency compared to a state-of-the-art interleaved two-level CCM totem-pole PFC. This translates into approximately 15 percent lower system losses at peak efficiency.

Availability
The CoolSiC MOSFET 400 V and 440 V G2 portfolio is available now. Further information is available at www.infineon.com/coolsic-400v.