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Home Semiconductor News

US Army Awards SiC Power Contract To GE Aviation

Semiconductor For You by Semiconductor For You
March 9, 2017
in Semiconductor News
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$4.1 million contract to develop and demonstrate electronics supporting high-voltage next generation ground vehicle electrical power architecture

GE Aviation has been awarded a $4.1 million contract from the US Army to develop and demonstrate SiC-based power electronics supporting high-voltage next generation ground vehicle electrical power architecture.

“We continue to invest in SIC and high density packaging to help the US Army to better manage on-board power.  This component provides the additional benefit of eliminating the need for an electronic cooling system,” said Vic Bonneau, president of Electrical Power Systems for GE Aviation.  Our similar SiC based programs and planned re-use have led to this new critical high temperature application.”

The $4.1 million contract will result in three hardware deliverables after a 24-month development program that will demonstrate the benefits of GE’s SiC MOSFET technology in a 200kW starter generator controller.  The integrated starter generator controller (ISGC) will provide sensored and sensorless control for multiple generator types in a single line replaceable unit weighing less than 50 pounds.  It will operate at 125degC ambient in bi-directional operation for engine start.  The ISGC will use 105 degC coolant and will be CANbus programmable.

The contract is GE’s 5th in support of the US Army’s Tank Automotive Research, Development and Engineering Center (TARDEC) next generation vehicle electrical power architecture leap-ahead technology development.  It will result in a prototype demonstration in 2018.

DCS Corporation is the contracting agent for US Army TARDEC.  DCS develops advanced technology solutions and provides acquisition management expertise for US Army aviation, ground vehicle, soldier systems, and missile systems.

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