Aixtron receives repeat order from Sumitomo for GaN-on-SiC production technology

Deposition equipment maker Aixtron SE of Herzogenrath, Germany has delivered a CRIUS metal-organic chemical vapor deposition (MOCVD) system in 4”-wafer configuration to Japan’s Sumitomo Electric Device Innovations Inc (SEDI) in order to boost its production of gallium nitride on silicon carbide (GaN-on-SiC) devices for RF data transfer applications including for the upcoming 5G wireless mobile network. The system was put into operation in fourth-quarter 2016.

SEDI has long-standing experience with Aixtron’s Close Coupled Showerhead technology, which enables easy scalability, says Aixtron. Furthermore, the system’s 4” wafer uniformity and precise process control is especially important for device production on cost-intensive silicon carbide wafers. The new reactor is equipped with optional features such as dynamic gap adjustment, ARGUS in-situ temperature control and the LayTec EpiCurve TT metrology system. The ARGUS monitoring device provides full wafer mapping in real time for optimum control of the growth process. Extended flexibility is enabled by allowing the adjustment of the process gap between the showerhead and the substrate.

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As an RF component provider, SEDI already offers a range of GaN high-electron-mobility transistor (HEMT) devices for radar, mobile phone base-stations, and general applications. The GaN-on-SiC HEMT devices enable high-power amplification at operating frequencies of up to 14GHz RF.