System efficiency is over 85 percent at 5 MHz at 14A output
EPC has announced the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, according to the company.
This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.
The EPC2111 is suitable for high frequency 12 V to point-of-load DC-DC conversion. Each device within the EPC2111 half-bridge component has a voltage rating of 30 V. The upper FET has a typical RDS(on) of 14 mΩ, and the lower FET has a typical RDS(on) of 6 mΩ.
The EPC2111 comes in a chipscale package for improved switching speed and thermal performance, and is 3.5 mm x 1.5 mm for increased power density.
A primary application is notebook and tablet computing because their power conversion circuitry typically occupies nearly half of the space and defines the height of the motherboard. The high frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next generation mobile computing, says EPC.
