“This is an important milestone for the company and the power electronics industry,” said Greg Knight, CEO at GT Advanced Technologies. “Our crystal growth experts have worked hard to achieve a repeatable, high-yield process technology for producing high quality SiC boules.”
He added: “Much of the world’s SiC production remains captive, which limits supply and keeps prices high. Our SiC solution will help to increase the availability of SiC semiconductors at significantly lower costs by increasing supply as production increases. We view this as a key step in enabling new high power semiconductor applications targeting market verticals such as electric vehicles and next generation PV inverters.”
GT has a long history with developing SiC equipment and solutions going back more than 15 years. The company pioneered the growth of two and four-inch SiC boules in its SiClone sublimation furnaces.