As the latest development in its CoolSiC diode family, Infineon Technologies AG of Munich, Germany has launched the CoolSiC Schottky diode 650V G6, which builds on the characteristics of the G5 to provide reliability, quality and increased efficiency. Complementing the 600V and 650V CoolMOS 7 families, the CoolSiC G6 diodes target applications in server and PC power, telecom equipment power, and photovoltaic (PV) inverters.
The G6 has a new layout, new cell structure, and a new proprietary Schottky metal system. The result is what is claimed to be an industry benchmark forward voltage (VF) of 1.25V, and a Qc x VF figure of merit (FOM) that is 17% lower than the previous generation. In addition, the new G6 diode makes use of silicon carbide’s strong characteristics of temperature-independent switching behavior and no reverse recovery charge.
The design of the device is said to provide improved efficiency over all load conditions along with increased system power density. The CoolSiC Schottky diode 650V G6 hence features reduced cooling requirements, increased system reliability, and extremely fast switching.