STMicroelectronics of Geneva, Switzerland has lauched a full range of 2-40A 1200V silicon carbide (SiC) JBS (junction barrier Schottky) diodes that enable a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature characteristics of SiC technology.
ST claims that its SiC diode manufacturing process creates extremely robust devices with best-in-class forward voltage (lowest VF), giving circuit designers extra freedom to achieve high efficiency and reliability using diodes with lower current rating and therefore lower cost. This makes SiC technology more accessible for cost-conscious applications including solar inverters, industrial motor drives, home appliances, and power adapters, says ST.
At the same time, performance-oriented applications that demand SiC for superior efficiency, low weight, small size or the best thermal properties can extend these advantages using ST’s latest 1200V SiC diodes. The higher efficiency margin provided by their lower forward voltage drop (VF) delivers benefits for automotive equipment such as on-board battery chargers (OBC) and charging stations for plug-in hybrid or electric vehicles (PHEV/EV). On the other hand, overall robust electrical performance ensures suitability in telecom and server power supplies, high-power industrial switched-mode power supplies (SMPS) and motor drives, uninterruptible power supplies (UPS), and large solar inverters.
Achieving the lowest VF also helps to reduce operating temperature and extend application lifetime.
ST’s new 1200V SiC diode family spans current ratings from 2A to 40A, including automotive-qualified devices, in surface-mount DPAK HV (high-voltage) and D2PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages. ST claims to be the only supplier to offer 1200V SiC diodes in the D2PAK package. Pricing starts at $2.50 for the 10A STPSC10H12D in TO-220AC, in 1000-unit quantities.
