What are the specifications of transistors?

There are some specifications of transistors which are given below,

• Maximum collector dissipation (P_C) is the maximum value of power dissipated in collector of a transistor.
• Transistor frequency at which the common emitter forward current gain is unity and denoted by F_T. its significances is that the product of gain and bandwidth equal the transition frequency.
• Collector-emitter voltage (V_CEO) is the maximum that can be applied across the collector and emitter of a collector.
• Collector current is the maximum value of collector current that a transistor can handle safely.
• Collector-base voltage (V_CB) is the maximum voltage that can be applied across the base and collector of a transistor.
• Collector saturation voltage is the collector-emitter voltage of a transistor that is fully conducting.
• Collector cut-off current (I_CEO) is the reverse saturation current flowing between collector and emitter with base open.
• Collector-to-base breakdown voltage is the maximum value of allowable reverse voltage that can be applied across the collector and base of a transistor with emitter open.
• Forward current gain is the maximum value of forward current of a transistor in CE configuration.
• Emitter–to-base breakdown voltage is the maximum value of allowable voltage that can be applied across the emitter to base of transistor with collector open.

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