Gallium nitride (GaN) technology start-up Exagan of Grenoble, France says that its founder & CEO Frédéric Dupont will be available in booth #9-230 at the PCIM (Power Conversion Intelligent Motion) Europe 2017 trade show in Nuremberg, Germany (16-18 May) to discuss the development of a cost-efficient, low-risk, 200mm manufacturing process for fast-switching, high-efficiency GaN-on-silicon devices.
The results stem from the joint development partnership that Exagan entered into with X-FAB Silicon Foundries AG of Erfurt, Germany in May 2015. Together, the companies have produced Exagan’s 650V GaN-on-Si G-FET power transistors using a standard CMOS process flow.
At PCIM Europe, Exagan’s senior executive will discuss the firm’s latest technology advances and provide an update on the strategic partnership with X-FAB.
Exagan says that its GaN-on-Si technology offers a path to accelerating the power electronics industry’s transition to smaller, more efficient electrical converters, for emerging applications including plug-in hybrid and electric vehicles, solar energy, industrial electronics, and charging of mobile electronics.
![](https://www.semiconductorforu.com/wp-content/uploads/2025/03/2020-Battery_KE1010R2-970x250-ROTATING-FINAL-V3.gif")
