A Schottky diode is a type of semiconductor diode formed by the small junction of an n-type semiconductor with a metal. Therefore, it is also known as the hot-carrier diode or Schottky barrier diode. The advantage of the Schottky diode is that it has a very low forward voltage drop and fast switching speed. The drawback of the Schottky diode is that it has low reverse breakdown voltage and high reverse leakage current.
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Schottky diode is a metal-semiconductor junction diode that has less forward voltage drop than the P-N junction diode and can be used in high-speed switching applications. Schottky diode is also known as Schottky diode, surface barrier diode, majority carrier device, hot-electron diode, or hot carrier diode.
V-I characteristics of schottky barrier diode
The V-I characteristics of a Schottky barrier diode are below
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- The forward voltage drop of the Schottky barrier diode is very low compared to a normal PN junction diode.
 - The forward voltage drop of the Schottky barrier ranges from 0.3 volts to 0.5 volts.
 - In the Schottky barrier, the forward voltage drop is made up of silicon material.
 - The forward voltage drop increases at the same time increasing the doping concentration of N-type semiconductors.
 - The V-I characteristics of a Schottky barrier diode are very steeper as compared to the V-I characteristics of normal PN junction, because of the Schottky barrier diode’s high concentration of current carriers.
 
Advantages of Schottky Diode
- The turn-on voltage of the Schottky barrier diode is between 0.2 and 0.3 volts. For a silicon diode, it is against 0.6 to 0.7 volts from a standard silicon diode.
 - It has a fast recovery time which denotes a small amount of stored charge that can be used for high-speed switching applications.
 - It occupies a very small area.
 - The capacitance levels are very small.
 - It has higher efficiency
 
Applications of Schottky Diode
- Schottky diodes are used for the voltage clamping application
 - Schottky diodes are also used as rectifiers in power supplies.
 
