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Home Semiconductor News

iDEAL Semiconductor Sets New Safety Level for High-Voltage Batteries with SuperQ™ MOSFETs

Semiconductor For You by Semiconductor For You
November 21, 2025
in Semiconductor News
0

New 150V/2.5mΩ device delivers industry-leading short-circuit robustness and enables up to 50% component reduction in 72V+ battery management systems

LEHIGH VALLEY, PA, November 20, 2025 – iDEAL Semiconductor, a leader in high-performance power silicon, today announced the availability of its SuperQ™ MOSFET technology, purpose-built to solve the critical safety and efficiency trade-off in high-voltage (72V and higher) battery management systems (BMS). The new platform sets an industry benchmark for short-circuit withstand capability (SCWC), the most vital safety metric for the BMS discharge switch.
The proliferation of high-voltage battery packs in e-mobility, drones and professional power tools introduces a high-stakes challenge: protecting against catastrophic failure during external short-circuit events, where currents can spike into the thousands of amps. The discharge MOSFET is the single component responsible for isolating the battery pack under these extreme conditions.
“In high-energy packs, robustness is non-negotiable. Traditional MOSFET designs are forced to compromise between achieving ultra-low RDS(on) for efficiency and the structural integrity needed to survive a massive short-circuit current,” said Dr. Phil Rutter VP of Design at iDEAL Semiconductor. “The SuperQ™ platform eliminates this compromise. Our proprietary cell structure delivers the market’s lowest on-resistance alongside a safety margin that is simply unmatched, giving designers the confidence to build smaller, more reliable, and lower-cost battery systems.”
1.4x Superior Short-Circuit Withstand Current
iDEAL Semiconductor’s internal testing demonstrated SuperQ’s significant performance advantage. A head-to-head comparison of the iS15M2R5S1T (150V, 2.5mΩ, TOLL package) against a leading competitor revealed:
Company / Product
Voltage
RDS(on)
SCWC (peak)
iDEAL SuperQ™ (iS15M2R5S1T)
150V
2.5mΩ
800A
Leading Competitor
150V
2.5mΩ
580A
The SuperQ device exhibited a 1.4 times higher short-circuit failure capability than its closest competitor. This breakthrough performance is achieved through a proprietary cell structure featuring a wider conduction region that maximizes power density and structural integrity under extreme stress.
Lower System Cost and Enhanced Reliability
For battery pack designers, this superior SCWC translates directly into system-level benefits:
  • Component Reduction: Because each SuperQ device handles a significantly higher short-circuit current, designers can use up to 50% fewer MOSFETs in parallel to meet the same safety requirements.
  • Cost Savings: Reducing the component count and complexity leads to a substantial decrease in the total Bill of Materials (BOM) and simplifies board layout.
  • Efficiency: Maintaining ultra-low RDS(on) of 2.5mΩ minimizes conduction losses, extending battery run-time and reducing thermal management needs.
The SuperQ portfolio is available immediately with devices up to 200V, providing solutions for battery platforms ranging from 72V to over 144V.
For further details and a white paper on their use in battery management systems please visit https://idealsemi.com/battery-management/.
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Tags: iDEAL SemiconductorMOSFETSemiconductorsSuperQ™ MOSFET
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