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Home Articles Power Management

Navitas Collaborates with NVIDIA on 800 V-to-12 V Power Delivery Board for Next-Generation AI Infrastructure

Semiconductor For You by Semiconductor For You
October 13, 2026
in Power Management, Semiconductor News
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Next-generation 24 kW power delivery board converts 800 VDC directly to 12 VDC in a single stage, eliminating the 50 V IBC power stage, boosting system efficiency and reducing board space. The solution will be showcased in the NVIDIA AI Factory MGX Ecosystem partner display area at OCP

TORRANCE, CA – October 12th , 2026 — Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced its latest 24 kW, 800 V-to-12 V DC-DC power delivery board (PDB), powered by GaNFast™ technology and developed in collaboration with NVIDIA, to support the NVIDIA MGX ecosystem and advance 800 VDC power architectures for AI data centers. The new PDB is planned to be featured on NVIDIA’s AI Factory MGX Wall partner display area at OCP Global Summit 2026.
This latest 24 kW, 800 V-to-12 V PDB extends Navitas’ portfolio of 800 VDC AI data-center platforms, building on the previously announced 20 kW, 800 V-to-6 V PDB developed in collaboration with NVIDIA. These solutions advance the core strategic focus of the Navitas 2.0 transformation to accelerate the replacement of legacy silicon with next-generation GaN and SiC high-power technologies across AI infrastructure, from Grid-to-xPU.
The PDB is capable of delivering 24 kW with a target efficiency of 97% at full load and a power density exceeding 2,000 W/in³, providing power for the entire compute tray. Designed in NVIDIA’s latest 400 mm × 60 mm form factor, the PDB can be integrated onto the compute motherboard as close as possible to the xPUs, minimizing power-delivery losses and supporting high-power demands.
The single-stage architecture converts 800 VDC directly to 12 VDC, eliminating the existing 50 V-to-12 V IBC conversion stage and delivering 12 V directly to the voltage regulator module (VRM) that powers the xPU. This simplified power architecture improves system efficiency and reliability while reducing power losses, board space and overall power-delivery complexity.
The power architecture incorporates 16 × NV6034 (650 V, 18 mΩ) GaNFast™ FETs on the primary side, configured in a stacked half-bridge topology and featuring Navitas’ latest dual-cooled DFN 8 × 8 package.
“The next era of AI will be defined not only by how much compute we can create, but by our ability to deliver the power needed to unleash its full potential,” said Chris Allexandre, President and CEO of Navitas. “Our collaboration with NVIDIA is breaking the AI infrastructure power wall by reimagining power delivery from 800 VDC to the GPU. This next-generation 24 kW solution demonstrates how GaNFast™ technology can eliminate power-conversion stages, increase efficiency and power density, and bring power closer to the GPU.”
Navitas’ portfolio of 800 VDC AI data-center platforms provides customers with greater flexibility to select the optimal intermediate-bus voltage and VRM architecture for their point-of-load power requirements.
The 800 V-to-12 V PDB is planned to be showcased at the NVIDIA AI Factory MGX Wall partner display area at OCP Global Summit 2026. For more information, please contact your Navitas representative or email info@navitassemi.com.
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