Infineon launches OptiMOS™ 7 40 V MOSFETs to improve efficiency and power density in AI server and telecom power conversion

Munich, Germany – 03 November 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching its OptiMOS™ 7 40 V switching-optimized power MOSFET portfolio for AI servers, data centers and telecom infrastructure. Designed for high-frequency DC-DC power conversion, the devices help designers improve efficiency and power density in space-constrained systems. Target applications include low-voltage secondary-side stages of high-voltage intermediate bus converters in emerging 800 V DC architectures and intermediate bus converters in 48 V power architectures, with switching frequencies beyond 1 MHz supported in suitable topologies.

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“With the OptiMOS 7 40 V, we give designers a MOSFET that cuts conduction and switching losses at the same time, so they can raise power density in the very limited space of an AI server,” said Richard Kuncic, Business Line Head Power Switches at Infineon. “It fits the secondary side of emerging 800 V DC architectures as well as today’s 48 V designs, which lets our customers move to the next architecture at their own pace.”

The OptiMOS 7 40 V portfolio balances on-state resistance (RDS(on)), output charge (Qoss) and gate charge (Qg) to address both conduction and switching losses. In a comparison of the source-down device IQE010N04LM7CGSC with its OptiMOS 6 predecessor IQE013N04LM6CGSC, maximum RDS(on) at a gate-source voltage of 4.5 V is reduced by up to 33 percent, while the figures of merit for output charge and gate charge are each reduced by up to 35 percent. Optimized for 5 V gate drive, the devices support gate-drive ecosystems used with GaN and are rated for junction temperatures up to 175 °C.

Source-down and dual-side cooling package options provide flexibility for compact layouts and thermal management. The IQE010N04LM7CG and IQE010N04LM7CGSC are offered in PQFN 3.3 mm × 3.3 mm source-down center gate packages, with overmolded and dual-side cooling options. Both feature a maximum RDS(on) of 1.0 mΩ at a gate-source voltage of 10 V. The portfolio also includes the ISCH65N04LM7SC, ISCH69N04LM7SC and ISC011N04LM7SC in PQFN 5 mm × 6 mm drain-down packages with dual-side cooling, featuring maximum RDS(on) values of 0.65 mΩ, 0.69 mΩ and 1.1 mΩ, respectively, at a gate-source voltage of 10 V.

Availability
The OptiMOS 7 40 V switching-optimized MOSFET portfolio is available and in mass production. Further information is available here. The application note provides application examples and detailed performance benchmarks.