- I Positive terminal of the battery is connected to the N-crystal and negative terminal of the battery is connected to P-crystal.
- In reverse biasing width of depletion layer increases.
- In reverse biasing resistance offered Rreverse = 105ohm
- Reverse bias supports the potential barrier and no current flows across the junction
due to the diffusion of the majority carriers. - A very small reverse current may exist in the circuit due to the drifting of
minority carriers across the junction. - Break down voltage: Reverse voltage at which break down of
semiconductor occurs. For Ge it is 25 V and for Si it is 35 V.
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