Ampleon’s “New” standard for L Band, GaN-SiC HEMT

High Output Power, High Efficiency of >700W GaN-SiC HEMT transistor for Long Pulse Radar Applications

Nijmegen, The Netherlands, 26 September 2022 – Ampleon will showcase at the European Microwave Week (held in Milan between 27 thru 29 September) our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications.

A key highlight for visitors to the Ampleon booth (#B36) will be the brand new CLL3H0914L-700 GaN-SiC HEMT. This rugged GaN transistor is optimised for radar implementations where long pulse width and high-duty cycles are required. The transistor was engineered to achieve over 700W of peak output power from a single transistor while operating at a voltage of 50V with industry-leading efficiency of over 70% as well as designed thermally for long pulse applications, such as pulse widths (~2 milliseconds) and 20% duty cycles.

These L Band GaN HEMT superior performance capabilities are demonstrated in a variety of application reference designs shown at the booth – including ones for defence/aerospace bands (960-1250MHz and 1030-1090MHz), plus an L band ground base radar (1200-1400MHz).

A datasheet for the CLL3H0914LS-700 can be accessed here. This high-power density and low-thermal resistance HEMT is now in full volume production. Units are available directly from Ampleon or authorised distribution partners, RFMW and Digi-Key. Large signal models in ADS and MWO can be sourced via the Ampleon website.

You can also learn more by coming to Booth #B36 at European Microwave Week.