Cambridge GaN Devices and IFP Energies nouvelles sign automotive inverter development deal
French public R&I organisation to use CGD’s GaN HEMTs in innovative, next-gen automotive inverter design 13.12.22 Cambridge, UK - Cambridge ...
Read moreFrench public R&I organisation to use CGD’s GaN HEMTs in innovative, next-gen automotive inverter design 13.12.22 Cambridge, UK - Cambridge ...
Read moreCeremony to be held at 10 am, November 17th on Neways’ booth, Hall A1, Stand 306, Messe München, Munich, Germany ...
Read moreCambridge spin-out in mass production and scaling up innovative product range; 15-18 November, Hall C3, Booth 535, Messe München, Munich, ...
Read moreCooperation will bring significant advantages to next-generation systems using power-efficient gallium-nitride (GaN) technology across a spectrum of applications Brussels, Belgium, ...
Read moreHigh Output Power, High Efficiency of >700W GaN-SiC HEMT transistor for Long Pulse Radar Applications Nijmegen, The Netherlands, 26 September ...
Read moreThe New GaN-Powered Wall Charger Delivers Breakthroughs in Power Efficiency, Charging Speeds, and Sustainability OTTAWA, Canada – July 27, 2022 ...
Read moreWI62120 Gives Power Electronics Designers New Density, Performance, Efficiency Options; Wide Range of Applications Seen in Consumer, Mobile, Industrial Power ...
Read moreCombining proven GaN technology with innovative packaging expertise Nijmegen, May 19, 2022: Nexperia, the expert in essential semiconductors, has announced ...
Read moreIn-person talks and demos aim to inspire innovative power designs Nijmegen, April 21, 2022: Nexperia, the expert in essential semiconductors, ...
Read moreApr 7, 2021: The STMicroelectronics VIPerGaN50 simplifies building single-switch flyback converters up to 50 Watts and integrates a 650V gallium-nitride ...
Read more© 2022 Semiconductor For You
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