Towards gallium nitride integration with silicon CMOS
Researchers in the USA have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) fabricated on 200mm-diameter silicon-on-insulator (SOI) substrates with multiple...
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Riber reports first-half 2017 revenue up 80% year-on-year
For first-half 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources...
Skyworks’ quarterly revenue grows by a more-than-expected 20% year-on-year to $900.8m
For fiscal third-quarter 2017 (to end-June), Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has...
Fujitsu achieves record output density with power amplifier for W-band GaN transmitters
At the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France (24-28 July), Tokyo-based Fujitsu Ltd and Fujitsu Laboratories...
US DOE awards Stion $1m for CIGSSe PV module efficiency R&D
Through the US Department of Energy’s SunShot Initiative Program (which to drive down the cost of solar electricity and support...
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