STMicroelectronics of Geneva, Switzerland has lauched a full range of 2-40A 1200V silicon carbide (SiC) JBS (junction barrier Schottky) diodes...

o provide design engineers with a platform to demonstrate the performance of gallium nitride high-electron-mobility transistors (HEMTs), GaN Systems Inc...

X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up enabling smaller...

Gallium nitride (GaN) technology start-up Exagan of Grenoble, France says that its founder & CEO Frédéric Dupont will be available...

Kaiam Corp of Newark, CA, USA – a private company founded in 2009 commercializing hybrid photonic integrated circuit (PIC) technology...

Signifying the first funding since a £1.2bn City Deal was formally agreed in March with the Welsh and UK governments,...

                                   High density range...

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that Osram Opto Semiconductors GmbH of Regensburg, Germany has...

Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has entered into insolvency proceedings. The...

New Arc range will come in track, pendant, downlight, and surface mounted designs GaN on GaN LED specialist Soraa has...