Skyworks launches ultra-low-loss DPDT antenna swap switch
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched its SKY13698-694LF ultra-low-loss double-pole double-throw...
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STMicroelectronics launches 1200V SiC junction barrier Schottky diodes spanning 2-40A current ratings
STMicroelectronics of Geneva, Switzerland has lauched a full range of 2-40A 1200V silicon carbide (SiC) JBS (junction barrier Schottky) diodes...
GaN Systems releases first E-HEMT bridgeless-totem-pole PFC reference design
o provide design engineers with a platform to demonstrate the performance of gallium nitride high-electron-mobility transistors (HEMTs), GaN Systems Inc...
X-FAB and Exagan produce GaN-on-Si devices on 200mm wafers
X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up enabling smaller...
Exagan’s GaN-on-Si technology Revolutionizes Energy Usage
Gallium nitride (GaN) technology start-up Exagan of Grenoble, France says that its founder & CEO Frédéric Dupont will be available...
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