Littelfuse and monolith semiconductor to demonstrate new SiC power semiconductor technologies at APEC 2017

Several demonstrations and new technology platforms will be presented by Littlefuse, Inc., and Monolith Semiconductor at the Applied Power Electronics Conference & Exposition (APEC 2017), March 26-30, 2017. This will mark their first joint appearance since the recent majority investment made by Littelfuse in Monolith, a Texas-based start-up company developing silicon carbide technology.

Silicon carbide Schottky diodes (Source: Monolith Semiconductor)The theme for booth #536 is “Making SiC Mainstream—Defined by Customers. Developed by Monolith. Delivered by Littelfuse.” Products nearing introduction, including the new GEN2 Series of 1200 V silicon carbide (SiC) Schottky diodes manufactured in an automotive-qualified 150mm CMOS foundry, will be highlighted.

Presentations planned by Monolith Semiconductor experts include:

• “Silicon Carbide MOSFETs – Deep Dive to Accelerate Your Next Power Converter Design,” Professional Education Seminar – Session S02, Room 15/16, March 26, 9:30 am to 1:00 pm.
• “Large Scale Test Bed for in-Circuit Reliability Testing of Silicon Carbide Diodes and MOSFETs Emulating Real Life Voltage and Current Stress,” Session T12 – Power Device Reliability, Room 21, March 29, 8:30 am to 10:10 am.
• “Rugged 1.2 kV SiC MOSFETs Fabricated in High-Volume 150mm CMOS Fab,” Industry Sessions Lecture, Session IS15 – Industrial Power Applications of Silicon Carbide Semiconductors, Room 13, March 30, 8:30 am to 11:30 am.

Applications experts will be available to walk booth visitors through the design process. Kiosks in the booth will offer visitors videos and models of several new technology platforms:
• Advanced power converters demonstrating the benefits of SiC-based platform designs, delivering module-like power, higher efficiency, increased power density and performance with discrete SiC devices.
• Evaluation kits and design platforms that can simplify the design and optimization of power converters using SiC diodes and MOSFETs