Etching of SiC and GaN in the same tool through advanced plasma source technology
Oxford Instruments has announced the development of a SiC via plasma etch process using its PlasmaPro100 Polaris system.
SiC is becoming an increasingly important material, particularly for high performance GaN RF devices using SiC as a substrate. A smooth via etch through the SiC is essential to the functioning of these devices.
“Our applications specialists have spent significant time developing this SiC via etch process on the PlasmaPro100 Polaris etch system, enabling high selectivity and throughput amongst other benefits. These benefits will enable our customers to etch both SiC and GaN in the same tool through advanced plasma source technology,” said Mark Dineen, optoelectronics product manager at Oxford Instruments Plasma Technology.
Capabilities of Oxford Instruments’ SiC via process include high SiC etch rate enabling maximum throughput; smooth sidewalls for problem free post etch metallisation; and high selectivity to underlying GaN layer giving a smooth, low damage stop onto the GaN device layers.
Other features include clamping of sapphire carriers using Oxford Instruments’ unique patented Electrostatic Clamp technology ensuring good sample temperature control and maximum yield; the capability of etching SiC and GaN in the same tool through advanced plasma source technology; and high utilisation provided by long Mean Time Between Cleans (MTBC.
