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Mitsubishi Electric develops SiC MOSFET with record power efficiency for 1200V-class power device

by Semiconductor For You

June 4, 2021

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric...

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Mitsubishi Electric develops SiC MOSFET with record power efficiency for 1200V-class power device

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