The breakthrough, 800 V–6 VDC-DC power delivery board eliminates traditional 48V intermediate bus converter stage while improving system efficiency, reliability, ...
Read moreDetailsQDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and ...
Read moreDetailsFirst systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy ...
Read moreDetailsThe latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI ...
Read moreDetailsIndustry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, ...
Read moreDetailsNavitas expands globally with Avnet building on its existing Avnet Silica (Europe) relationship, to support high-growth high-power markets such as ...
Read moreDetailsTo accelerate GaN adoption in India’s AI, Mobility, Industrial, and Energy Markets Torrance, CA and Hyderabad, India – Mon Dec ...
Read moreDetailsAugmenting Reliability and Performance in Mission-Critical Energy Infrastructure Applications New 3300V and 2300V SiC products based on latest GeneSiC™ Trench-Assisted ...
Read moreDetailsTORRANCE, CA – November 27th, 2025 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon ...
Read moreDetailsNew technology and foundry partnership expands U.S. capacity for advanced GaN technology, design and at-scale manufacturing to support a wide ...
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