Infineon and Panasonic accelerate GaN technology development for 650 V GaN power devices
Munich, Germany and Osaka, Japan – 2 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic ...
Read moreMunich, Germany and Osaka, Japan – 2 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic ...
Read moreParticipate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications;View on-demand video demos ...
Read moreOTTAWA, Ontario, August 10, 2021 – GaN Systems, the global leader in GaN power semiconductors, today introduced two new transistors ...
Read moreSilicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density New ...
Read moreThe GMICP2731-10 helps maintain signal fidelity by allowing Earth stations to transmit at high RF levels without sacrificing the quality ...
Read moreComprehensive portfolio of wide bandgap devices for high-performance charging solutions APEC 2021 - PHOENIX, Ariz. – June 7, 2021 – ...
Read moreNB_EVLMG1-250WLLC Jun 4, 2021: STMicroelectronics has released the first reference design for its MasterGaN power packages, demonstrating how the new ...
Read moreNew product family to combine Power GaN with intelligence for smaller and more highly integrated system solutions for the EV ...
Read moreSan Jose, California – 26 May, 2021 – Building on decades of experience as a power leader, Infineon Technologies AG ...
Read moreOTTAWA, Ontario, May 20, 2021 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today that ...
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