Infineon launches new radiation hardened GaN transistors
Munich, Germany – 29 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the first of ...
Read moreMunich, Germany – 29 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the first of ...
Read moreParty time for really outside the box thinking Reading, UK 18 March 2021. Sondrel is designing its first radiation-hard (Rad-Hard) ...
Read moreJAXA’s Hayabusa2 Spacecraft Enabled by Renesas’ Intersil-Brand Rad-Hard ICs February 25, 2021 - TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), ...
Read moreExpansion of SA50-120 family introduces qualified 100V and 120V bus systems for space applications New Delhi, February 24, 2021 – ...
Read moreConsolidates Essential Functions for the Motor Control and Position Sensing Circuitry of Satellite Elements into a Single Chip Microchip’s LX7720 ...
Read moreLaunches extra-rugged rectifiers and the industry’s first Single-Event Burnout (SEB) rated high-voltage Schottky diodes June 29, 2020 - STMicroelectronics has ...
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