Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six 650V Schottky barrier diodes (SBDs) fabricated with SiC and housed in surface-mount packages.
Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (named DPAK) reduces system size and thickness.
The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.
TDSC says it will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.
Features include a high surge peak forward current nearly 7 to 9.5 times the current rating, IF(DC). It also has a figure of merit (VF•Qc) that is about a third lower than first generation products, indicating high efficiency.
The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including PFC circuitry in high-efficiency power supplies.