At the 2017 Power Conversion and Intelligent Motion (PCIM) Europe expo in Nuremberg, Germany (16-18 May), Transphorm Inc of Goleta, near Santa Barbara, CA, USA – which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications – is demonstrating its high-voltage GaN FETs for power electronics systems (including power supplies, servo motors and photovoltaic inverters) as well as showcasing its AEC-Q101 qualified GaN FET (launched in late March, and claimed to be the industry’s first automotive-qualified 650V GaN FETs):
- 3.5kW integrated half-bridge module preview: Transphorm’s easy-to-use surface-mount half-bridge module is designed to simplify PCB layout and shorten design time. The firm will soon offer this module as a building block for bridgeless totem-pole, half-bridge, full-bridge and LLC topologies.
- First GaN servo motor: Targeting 100-400W applications, the Yaskawa integrated servo motor uses Transphorm’s GaN FETs to increase system power density and efficiency, to simplify system architecture, and to deliver a dramatic reduction in system size.
- First GaN redundant power supply: Targeting 500W applications, the Telcodium redundant AC power supply uses Transphorm’s TPH3206PS and TPH3202PS GaN FETs to increase efficiency and power density while reducing standby power (to less than 1W) and internal temperature yields.
- First GaN AC-DC power supply with bridgeless totem-pole PFC: Targeting 3kW applications, the Bel Power TET3000 uses Transphorm’s TPH3205WS to achieve 80 Plus Titanium efficiency while reducing system size to meet a 1U design.
- High-voltage GaN reference design previews: Transphorm’s 4.2kW PV inverter (DC-to-DC, DC-to-AC) and 3.3kW totem-pole power factor correction (PFC) reference designs, scheduled for release later this year, exemplify one type of customer design resource provided by Transphorm’s Silicon Valley Center of Excellence (formally opened in March).