Specification of BJT (bipolar junction transistor)

There are some important specifications of bipolar junction transistor (BJT) which are given below.

• The bipolar junction transistor (BJT) has maximum collector dissipation, P_D.
• C. current gain β (h_FE).
• Collector cut off current, I_CEO.
• Collector saturation voltage, V_{CE (sat)}.
• Collector to emitter cut off voltage, V_CEO.
• It has small signal current gain, α (h_fb).
• Maximum collector current I_C(max).
• Maximum collector to emitter voltage, V_{CE (max)}.
• Collector to emitter breakdown voltage, BV_CBO.
• Base emitter saturation voltage, V_{BE (sat)}.
• Collector base cut off current, I_CBO.

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