There are some important specifications of bipolar junction transistor (BJT) which are given below.
- The bipolar junction transistor (BJT) has maximum collector dissipation, PD.
- C. current gain β (hFE).
- Collector cut off current, ICEO.
- Collector saturation voltage, VCE (sat).
- Collector to emitter cut off voltage, VCEO.
- It has small signal current gain, α (hfb).
- Maximum collector current IC(max).
- Maximum collector to emitter voltage, VCE (max).
- Collector to emitter breakdown voltage, BVCBO.
- Base emitter saturation voltage, VBE (sat).
- Collector base cut off current, ICBO.
