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Specification of BJT (bipolar junction transistor)

Semiconductor For You by Semiconductor For You
June 13, 2017
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There are some important specifications of bipolar junction transistor (BJT) which are given below.

  • The bipolar junction transistor (BJT) has maximum collector dissipation, PD.
  • C. current gain β (hFE).
  • Collector cut off current, ICEO.
  • Collector saturation voltage, VCE (sat).
  • Collector to emitter cut off voltage, VCEO.
  • It has small signal current gain, α (hfb).
  • Maximum collector current IC(max).
  • Maximum collector to emitter voltage, VCE (max).
  • Collector to emitter breakdown voltage, BVCBO.
  • Base emitter saturation voltage, VBE (sat).
  • Collector base cut off current, ICBO.
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