Infineon’s SiC Power Semiconductors Power Toyota’s New bZ4X EV

Munich, Germany and Tokyo, Japan – 9 February 2026 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) today announced that CoolSiC™ MOSFETs (silicon carbide (SiC) power MOSFETs) have been adopted in the new bZ4X model from Toyota, the world’s largest automaker. Integrated into the on-board charger (OBC) and DC/DC converter, the SiC MOSFETs leverage the material’s advantages of low losses, high thermal resistance, and high voltage capability to help extend driving range and reduce charging time.

“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility.” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. “With our dedication and our commitment to innovation and zero-defect quality, we are well positioned to meet the growing demand for power electronics in electromobility.”

Infineon’s CoolSiC MOSFETs feature a unique trench gate structure that reduces normalized on-resistance and chip size, enabling reductions in both conduction and switching losses to contribute to higher efficiency in automotive power systems. In addition, optimized parasitic capacitance and gate threshold voltage enable unipolar gate drive, contributing to simplification of drive circuits for automotive electric drive train and supporting high-density, high-reliability design for OBC and DC/DC converters.