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Home Semiconductor News

SemiQ to Debut SiC Power Solutions for Next-Gen AI Datacenters and High-Power Infrastructure at APEC 2026

Semiconductor For You by Semiconductor For You
February 18, 2026
in Semiconductor News
0

QSiC™Gen3 line featuring 1200V SOT-227, S3 half-bridge, B2T1 six-pack and B3 full-bridge packages on display at Booth #1451

February 18, 2026, Lake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, will debut its latest SiC module advances at the 2026 Applied Power Electronics Conference (APEC).
These modules have been designed to deliver compact and efficient solutions for active front ends (AFE) and the high‑performance compressor units used in advanced datacenter cooling systems.
The new lineup has been engineered to meet the rising power and thermal demands of AI-driven datacenters, high-power industrial, and EV applications, and will be on display at Booth #1451 throughout the show, from March 22 to 26.
Product Highlights
Visitors to the SemiQ booth will be able to see the company’s latest QSiC™ Gen3 SiC modules, which feature a 30% reduction in specific on-resistance (RONsp) and turn off energy losses (EOFF) versus its previous generations. These modules significantly reduce cooling complexity and switching losses for EV charging stations, energy storage systems, and industrial motor drives.
With additional showcased advances including:
  • S3 Modules: This family includes a 608 A half-bridge module with an ultra-low 2.4 mΩ RDSon and a junction-to-case thermal resistance (RθJC) of just 0.07ºC/W.
  • SOT-227 Modules: Featuring five modules with RDSon values of 7.4, 14.5, and 34 mΩ, optimized for server power supplies, battery chargers and PV inverters.
  • B2T1 Six-Pack Modules: Spanning an RDSon range of 19.5 to 82 mΩ designed to minimize parasitics in motor drives and advanced AC-DC converters.
  • B3 Full-Bridge Modules: Delivering up to 120 A with RDSon as low as 8.6 mΩ. These modules maximize power density for high-voltage DC-DC systems.
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency, and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
To find out more, please visit semiq.com or meet us in person at the show, Booth #1451.
Download datasheets for SemiQ’s MOSFET modules here.
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Tags: power semiconductorsSemiQSilicon Carbide
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