Nexperia explores collaboration on next-generation power semiconductor solutions for electrified powertrains with Aurobay Technologies

Joint evaluation of GaN and SiC technologies aims to unlock higher efficiency and more compact power electronics for automotive applications.

Nijmegen, Netherlands; September 1, 2026: Nexperia^* today announced it will explore a strategic collaboration on advanced power semiconductor solutions for automotive applications with Aurobay Technologies, a division of Horse Powertrain Ltd. (a joint venture between Renault Group and Geely). The collaboration aims to combine Nexperia’s expertise in gallium nitride (GaN) and silicon carbide (SiC) semiconductor technologies with Aurobay Technologies’ capabilities in powertrain system design and integration. Building on a successful existing collaboration, the companies aim to evaluate how closer cooperation across semiconductor development and powertrain integration can support the next generation of electrified and hybrid vehicle platforms.

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The collaboration follows the successful deployment of Nexperia’s GaN devices in Aurobay Technologies’ highly integrated power generation system for range extender applications. The project demonstrated the potential of wide-bandgap semiconductor technologies to improve efficiency, reduce system size and weight, and enhance overall performance in demanding automotive environments.

Building on this foundation, Nexperia and Aurobay Technologies will assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems. By combining Nexperia’s WBG expertise with Aurobay Technologies’ experience and capabilities in powertrain systems, the companies intend to evaluate joint engineering approaches, including early-stage co-design and system-level optimization.

As vehicle manufacturers seek higher efficiency, greater power density and more compact powertrain architectures, wide-bandgap semiconductor technologies are becoming increasingly important enablers of electrification. Through this collaboration, Nexperia and Aurobay Technologies aim to explore new approaches that accelerate the adoption of advanced power semiconductor solutions and support the development of scalable, high-performance propulsion systems for future mobility.

Edoardo Merli, Head of Business Group Wide-Bandgap, IGBTs and Modules at Nexperia, said: “GaN and SiC technologies offer significant opportunities to improve efficiency, power density and system performance in automotive applications. By working closely with Aurobay Technologies, we can better understand system-level requirements and evaluate how advanced semiconductor technologies can deliver measurable benefits at the vehicle level. We look forward to building on our successful collaboration and exploring new opportunities together.”

Dr. Ma Yongquan, Chief Engineer, Advanced Engineering on Electrical Components at Aurobay Technologies, said: “Our experience integrating Nexperia’s GaN technology into a highly integrated power generation system demonstrated the potential of close collaboration across the value chain. By combining our expertise in powertrain systems with Nexperia’s semiconductor innovation, we can evaluate new approaches to improving efficiency, performance and packaging for future electrified propulsion systems.”

^*Note: Nexperia Holding B.V. (“Nexperia”) is the parent company of the Nexperia group. This statement applies to Nexperia Holding B.V. and its consolidated subsidiaries. Nexperia deconsolidated Nexperia (China) Ltd., Nexperia (Shanghai) Ltd., Nexperia Technology (Shanghai) Ltd., Nexperia (Wuxi) Ltd. and ITEC Technology (Wuxi) Ltd. with effect from 1 October 2025 due to the loss of actual control over these entities and as such no disclosures, statements, information and data contained in this statement should be interpreted as covering these entities or their operations.