Navitas Delivers Latest Gen 5 GaNFast™ Manufactured in the U.S. Through GlobalFoundries Partnership to Accelerate AI Infrastructure

TORRANCE, CA – September 1^st , 2026 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that the first shipments of U.S.-manufactured 5th Generation GaNFast™ technology, in partnership with GlobalFoundries (GF), will begin in September, marking a major milestone in strengthening the domestic GaN ecosystem for AI infrastructure and critical national security applications.

In November 2025, Navitas and GF announced a long-term strategic partnership to accelerate U.S. GaN innovation and domestic manufacturing. Navitas developed its Gen 5 GaNFast FETs and power integrated circuits (ICs) for production at GF’s US based 200mm GaN-on-Si manufacturing facility in Burlington, Vermont.

The first shipment of the Gen 5 GaNFast family marks a major milestone in the Navitas-GF collaboration, bringing Navitas’ next-generation GaNFast technology into a U.S. production foundry for AI infrastructure, performance computing, industrial electrification, and critical national security applications.

Since 2014, Navitas has pioneered GaN power semiconductor innovation, establishing industry leadership in GaNFast FETs and power ICs that integrate power, drive, control, sensing and protection. With more than 300 issued and pending patents across GaN and SiC, Navitas has built deep proprietary expertise in GaN process design kits (PDKs), device architectures and integrated power technologies.

Working closely with GF, Navitas applied this expertise to optimize its proprietary Gen 5 GaNFast technology and device architectures for manufacturing on GF’s advanced 200 mm GaN-on-silicon platform. Combined with GF’s decades of semiconductor manufacturing expertise and high-volume production capabilities, the partnership delivers a trusted U.S.-based supply of advanced GaN power semiconductors for AI infrastructure and other critical applications.

“This milestone demonstrates the strength of American innovation and manufacturing,” said Chris Allexandre, President and CEO of Navitas. “Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the U.S. semiconductor ecosystem.”

“The first shipment from our U.S. manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply,” said Kannan Soundarapandian, senior vice president of GF’s power business. “By combining Navitas’ power semiconductor leadership with GF’s manufacturing expertise, we are enabling the high-efficiency power solutions needed for AI infrastructure and other critical applications while strengthening the resilience of the U.S. semiconductor ecosystem.”

The initial product family is expected to include 650 V GaN FETs with R_DS(ON) values of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ, with first wafers scheduled to ship in September, internal samples in October, and strategic customer samples before the end of the year.

To learn more about Navitas’s capabilities in GaN technology, please contact a Navitas Representative or email: info@navitassemi.com.