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Dual-Channel Isolated Gate Drivers from Diodes Incorporated Enable Flexible, Reliable Half-Bridge and Independent Gate-Drive Topologies for Switching Applications

Semiconductor For You by Semiconductor For You
November 6, 2026
in Semiconductor News
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Plano, Texas – November 6, 2026 – Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the release of the API21550/API21552 series within its RobustISO™ family of isolation products. These dual-channel isolated gate drivers are designed for system engineers who require robust, high-voltage isolation and reliable signal transmission for power-switch driving. Applications include motor drives, solar inverters, battery management systems (BMS), servers, IT and industrial infrastructures, and high-voltage DC-DC converters.

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The API21550/API21552 series features a silica-based capacitive isolation barrier that can withstand a breakdown voltage of up to 13kVRMS and provides a predicted isolation barrier lifetime exceeding 40 years*. The devices achieve a minimum common mode transient immunity (CMTI) of 150V/ns, which helps maintain signal integrity in the presence of fast voltage transients typical of high-voltage switching environments. The API21550/API21552 series provides up to 4A source and 6A sink peak current capability, with supply voltage support up to 30V on the output side and 3V to 5.5V on the input side. Both devices deliver short propagation delays (40ns typ.) with minimal pulse-width distortion (7ns max.) and external disable functions. Depending on the package, the devices provide reinforced isolation with a withstand isolation voltage (VISO) of up to 5.7kVRMS and surge isolation voltage up to 12.8kVpk.

The API21550 device has separate high- and low-side driving outputs with adjustable deadtime, providing shoot-through protection and optimizing the device for isolated half-bridge driving applications. The API21552 has dual independent driving outputs, supporting dual low-side, dual high-side, and half-bridge gate driving applications.

The integrated features of the RobustISO API21550/API21552 series include a 5ns de-glitch filter for improved noise immunity, active pulldown for output safety, and undervoltage lockout (UVLO) on both the input and the output power rails. These enable the devices to support a wide range of switch-driving application scenarios, including silicon-based MOSFETs and IGBTs, as well as silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap power devices.

The API21550/API21552 series is supplied in the SO-16W (Type CJ), SO-14W (Type CJ), and SO-16 (Type CJ) packages and is available at $0.99 in 1,000-piece quantities.

The devices are being demonstrated at electronica 2026 as part of Diodes’ HV-to-48V power conversion demonstration, which visitors can explore at Booth 211 in Hall C6.

Automotive-compliant** versions, API21550Q/API21552Q, are available and suitable for automotive applications.

More information about the RobustISO family can be found at: https://www.diodes.com/products/isolation.

Tags: Diodes IncorporatedIsolated Gate Driver
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Dual-Channel Isolated Gate Drivers from Diodes Incorporated Enable Flexible, Reliable Half-Bridge and Independent Gate-Drive Topologies for Switching Applications

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November 6, 2026
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