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Home Semiconductor News

Custom MMIC launches packaged version of ultrawideband 2-22GHz distributed LNA

Semiconductor For You by Semiconductor For You
July 21, 2017
in Semiconductor News
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Monolithic microwave integrated circuit developer Custom MMIC of Chelmsford, MA, USA has launched the CMD241P4, a packaged version of its CMD241 ultra-wideband gallium arsenide (GaAs) MMIC distributed low-noise amplifier (LNA).

The wideband operation, low noise figure, low current consumption, return loss, and compact size make the device suitable for L-, S-, C-, X-, Ku- and K-band wideband radar, broadband microwave/millimetre-wave communications, SatCom, and test & measurement instrumentation applications.

The CMD241P4 exhibits gain of greater than 13dB with a low noise figure of 2.3dB. Both the gain and noise figure are extremely stable over temperature, from -55℃ to +85℃. The device demonstrates a P1dB (output power at 1dB gain compression) of more than +21dBm at 11GHz and an OIP3 (output third-order intercept point) of +28dBm, operating off a positive 3-8V supply, with a low current draw of only 74mA. The input return loss is typically 13dB, and the output return loss is 15dB.

The distributed amplifier comes in a Pb-free RoHs-compliant 4×4 QFN plastic package. Also incorporated into the design of the MMIC is a 50Ω matched impedance at the input and output ports, removing the need for both external DC blocks and RF matching.

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