ELASER Scales Up GaN Capacity With Aixtron Tool

Aixtron SE, a provider of deposition equipment, has announced that Elite Advanced Laser Corporation (eLASER), a Taiwanese manufacturer of optoelectronic and RF components, has placed a repeat order for an AIX G5+ C system to produce GaN epitaxial wafers and devices for power electronics applications.

The production tool will be installed during the second half of 2017 to complement the customer’s existing capacity.

It integrates the Penta-Injector technology for best material uniformities across the entire wafer diameter and is equipped with a Cassette-to-Cassette (C2C) Wafer Transfer Module for full automation of GaN processes.

“We have been impressed by the speed at which eLASER has transferred their device manufacturing processes on our system technology. Therefore, we are convinced that the recent addition of our AIX G5+ C platform which has become the tool of record at GaN power electronics manufacturers, will support the company’s goal to gain further market share in the GaN power electronics ecosystem.

“While offering configurations of 8×150 mm and 5×200 mm, the tool meets the toughest requirements from the silicon industry in terms of uniformity and particles. Thereby, Aixtron’s G5+ C system technology is breaking down the barriers to bring GaN into silicon production lines”, says Aixtron president Bernd Schulte.