EPC showcasing eGaN FETs and ICs in high-power-density DC-DC conversion and high-frequency applications

At the Applied Power Electronics Conference & Exposition (APEC 2018) in San Antonio, Texas (4-8 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – is delivering seven technical presentations on GaN technology and applications:

• Education Seminar: ‘Maximizing GaN FET and IC Performance, Not Just a Drop in Replacement of MOSFETs’, by Alex Lidow, Michael de Rooij, David Reusch and John Glaser;
• Exhibitor Seminar: ‘GaN Transistors for Efficient Power Conversion’, by Alex Lidow;
• ‘Moving Up in Voltage with eGaN FETs’, by John Glaser;
• ‘Amplifier Design Challenges for Large Area Highly Resonant Wireless Power Systems’, by Michael de Rooij and Yuanzhe Zhang;
• ‘Evaluation of Measurement Techniques for High-Speed GaN Transistors’, by Suvankar Biswas and Tom Neville (Tektronix);
• ‘Design Considerations for GaN Transistor Based Synchronous Rectification’, by David Reusch and John Glaser; and
• ‘System Optimization of a High-Power Density Non-Isolated Intermediate Bus Converter for 48 V Server Applications’, by David Reusch, Suvankar Biswas and Yuanzhe Zhang.

In booth #1255, EPC is demonstrating its latest eGaN FETs and ICs in customers’ end-products enabled by eGaN technology. These include a high-power-density 48–12V non-isolated converter capable of delivering over 700W. In addition, a range of 3D real-time LiDAR imaging sensors used in autonomous vehicles is being displayed. Also, a single desktop is implementing a high-power resonant wireless charging solution capable of generating 300W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.