GaN Systems exhibits customer-built systems using its GaN transistors

In booth #9-511 at the Power Conversion and Intelligent Motion (PCIM 2017) Europe exhibition in Nuremberg, Germany (16-18 May), GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control – is demonstrating dozens of customers’ commercial systems that are optimized using its GaN transistors for consumer, industrial, transportation and wireless power transfer applications such as DC/DC converters, energy storage systems, electric vehicle (EV) traction inverters, power modules, PWM motor controllers, and LED drivers.
The systems on show include:

• an airborne drone flying with power generated only by a 150W wireless transmitter operating at 13.56MHz;
• a 200W AC adapter one third the size of conventional adapters;
• a half-bridge topology comparison that shows how GaN outperforms silicon carbide (SiC);
• a best-in-class AirFuel Alliance-based wireless transmitting platform capable of charging multiple phones, pads, and laptops;
• a universal motherboard and four daughterboard platform for easily evaluating GaN transistor performance in any half-bridge-based topology;
• a 48V DC-DC evaluation kit that shows what is said to be outstanding efficiency, suitable for automotive and data-center applications;
• a 3-phase motor controller that operates at optimal efficiency;
• a highly efficient, 3kW power factor correction (PFC) reference design and full documentation for GaN Systems’ GS66508T transistors;
• several on-board chargers that have 3x the power density of conventional chargers;
• a high-power half-bridge building block equipped with an IMS board, eight GaN transistors and a matching driver card, forming a complete building block for high-power systems; and
• an ultra-small, highly integrated 1MHz LED driver, constructed in a novel architecture that can only be enabled by GaN.