GaN Systems releases first E-HEMT bridgeless-totem-pole PFC reference design
o provide design engineers with a platform to demonstrate the performance of gallium nitride high-electron-mobility transistors (HEMTs), GaN Systems Inc...
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X-FAB and Exagan produce GaN-on-Si devices on 200mm wafers
X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up enabling smaller...
Exagan’s GaN-on-Si technology Revolutionizes Energy Usage
Gallium nitride (GaN) technology start-up Exagan of Grenoble, France says that its founder & CEO Frédéric Dupont will be available...
Kaiam completes acquisition of Compound Photonics fab in UK
Kaiam Corp of Newark, CA, USA – a private company founded in 2009 commercializing hybrid photonic integrated circuit (PIC) technology...
Councils in Cardiff Capital Region investing £37.9m to establish compound semiconductor foundry
Signifying the first funding since a £1.2bn City Deal was formally agreed in March with the Welsh and UK governments,...
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