Infineon signs 200-millimeter silicon carbide wafer supply agreement with Wolfspeed to further strengthen supply chain resilience

• Multi-year agreement with Wolfspeed supports Infineon’s conversion from 150-millimeter to 200-millimeter silicon carbide (SiC) manufacturing
• Expanded substrate sourcing strengthens supply chain resilience and enhances flexibility to support future growth
• Agreement supports growing demand for SiC power semiconductors for electric vehicles, renewable energy systems and AI datacenter power infrastructure

Munich, Germany and Durham, N.C – 15 October 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Wolfspeed, Inc. (NYSE: WOLF) have signed a new multi-year supply agreement for 200-millimeter silicon carbide (SiC) wafers, transitioning Infineon’s existing Wolfspeed supply relationship from 150-millimeter to 200-millimeter substrate technology. SiC semiconductors have become a key enabling technology for the electrification and energy efficiency applications that drive global decarbonization, from electric vehicles and renewable energy systems to AI datacenter power infrastructure. The agreement directly supports Infineon’s conversion to 200-millimeter SiC manufacturing, strengthening Infineon’s position as the global leader in power semiconductors and reinforcing the supply chain resilience that underpins its SiC growth strategy.

“Silicon carbide is at the heart of the energy transition, and securing a high-quality, resilient supply of 200-millimeter substrates is essential to delivering on our customers’ long-term commitments,” said Alexander Gorski, Chief Operations Officer at Infineon. “This agreement further broadens our strong supply base for our 200-millimeter high-volume manufacturing, building on a 20-year supply relationship between our two companies. It strengthens supply chain security for our customers and provides additional flexibility and scalability to support Infineon’s future growth.”

ADVERTISEMENT

AI datacenters are beginning to emerge as a significant demand driver for SiC power semiconductors. Power conversion efficiency across the datacenter power chain is a direct operating cost consideration for hyperscalers managing infrastructure at scale. The switching efficiency and thermal performance of SiC make it a technically suitable option for specific power conversion stages where silicon reaches its practical limits. Together with growing SiC adoption across electric vehicle drivetrains, solar inverters and industrial motor drives, these trends support a strong long-term outlook for high-quality 200-millimeter SiC substrates.

The transition to 200-millimeter SiC wafers delivers large manufacturing economics compared to 150-millimeter production. Larger wafer diameter increases usable die area per wafer, reduces per-unit substrate cost, and improves overall manufacturing efficiency. Infineon operates a multi-source SiC substrate strategy to maintain supply chain flexibility and quality across its global manufacturing network, including its world-class 200-millimeter SiC fab in Kulim, Malaysia, which is designed to be the world’s largest and most competitive silicon carbide manufacturing facility.