Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency

TORRANCE, CA – October 21, 2026 — Navitas Semiconductor (Nasdaq: NVTS), a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, today announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure.

The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK™ form factor and has a class-leading R_DSON (8 mΩ).

It has been developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure. These gains are enabled through its deployment of Navitas’ fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) architecture, with the launch extending Navitas’ 2300 V and 3300 V ultra-high voltage SiC portfolio.

As grid-tied power architectures increasingly underpin next-generation AI data centers, Navitas’ UHV SiC modules provide the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks. This places the new module family at the center of Navitas’ AI infrastructure portfolio. spanning AI data center and energy and grid infrastructure alongside battery energy storage, solar, EV megawatt charging, hydrogen fuel cell electrolysis and DC-DC conversion, and industrial motor-drive and high-voltage power supply applications.

The modules also integrate several construction enhancements that better meet the needs of demanding, high-power applications. For example, its aluminum nitride (AlN) active-metal-braze (AMB) substrate enables superior heat spreading and supports an isolation capability of over 5 kV. Its epoxy-resin potting technology reduces internal stress distribution, limits moisture and contaminant ingress, and delivers 10x improvements in thermal conductivity versus silicone gel.

Additionally, the module’s high-current, press-fit pins have twice the current-carrying capability per pin versus standard press-fit connections. An optional pre-applied thermal interface material (TIM), which simplifies and standardizes heatsink assembly, is also available.

The new module family will be qualified to Navitas’ AEC-Plus* reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements. The benchmark reflects Navitas’ focus on system-level lifetime requirements for the demanding mission profiles found in energy and grid infrastructure applications.

The AEC-Plus qualification includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing to represent stringent fast-switching application mission profiles; it also more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R). Additionally, it implements an extended power-cycling and temperature-cycling testing and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices.

Samples of the G4H08MT23GB4(HC) family are available immediately, with options for pre-applied TIM and high-current variants:

A double-pulse test (DPT) system, EVB-UHVSIC-GB-E-DPT-1, is also available on request. This has been created to help engineers evaluate the device’s switching performance. A white paper on Trench-Assisted Planar Technology is also available for download from the Navitas website.

To request samples, contact a Navitas representative or email info@navitassemi.com.

*AEC-Plus is Navitas’ internal reliability qualification benchmark that extends beyond standard AEC-Q101 and JEDEC test requirements.