Infineon extends its PQFN 2×2 mm² product portfolio with best-in-class OptiMOS™ power MOSFETs
Munich, Germany – July 26, 2023 – A small footprint of discrete power MOSFETs plays a critical role in achieving ...
Read moreMunich, Germany – July 26, 2023 – A small footprint of discrete power MOSFETs plays a critical role in achieving ...
Read moreMunich, Germany – 21 July, 2023 – In static switching applications, power designs focus on minimizing conduction losses, optimizing thermal ...
Read moreHigh-efficiency switching with reduced spiking now in LFPAK56 and LFPAK88 Nijmegen, June 15, 2023: Nexperia, the essential semiconductor expert, today ...
Read moreMunich, Germany – 13 June, 2023 – Infineon presents its new generation of 1200 V CoolSiC™ MOSFETs in TO263-7 for ...
Read moreRemoving manual calculation, parameters dynamically respond to user inputs Nijmegen, May 10, 2023: Nexperia, the essential semiconductor expert, today announced ...
Read morePlano, Texas – March 30, 2023 – Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of ...
Read moreNexperia introduces the first application-specific MOSFETs (ASFETs) for hotswap in SMD copper-clip LFPAK88 packaging for 60% reduced footprint Additional 40% ...
Read moreSEOUL, South Korea, March 2, 2023 - Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company has released ...
Read moreNew 1700 V EliteSiC devices provide reliable, high-efficiency operation in energy infrastructure and industrial drive applications LAS VEGAS – Jan. ...
Read moreFully optimised RDS(on) & SOA manage in-rush currents in 12 V hotswap and soft start applications Nijmegen, November 18th, 2022: ...
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