Infineon introduces CoolGaN™ IPS family for applications in the 30 to 500 W power range
Munich, Germany – 4 May 2021 – Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable ...
Read moreMunich, Germany – 4 May 2021 – Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable ...
Read moreOTTAWA, Ontario, April 29, 2021 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced its ...
Read moreOver 99% efficient at 100kHz using 3 5mΩ MOSFETs Brings significant benefits to EV and renewables April 20 2020, Campbell, ...
Read moreMunich, Germany – 9 March 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched StrongIRFET™ 2 – ...
Read moreBroad 24-model lineup with withstand voltages of -40V/-60V ideal for large consumer and industrial equipment ROHM releases a 24-model lineup ...
Read moreLatest Generation Solar Inverter Chargers ‘Powered By ROHM’ ROHM Semiconductor recently announced that Midnite Solar, the leading producer of a ...
Read moreMunich, Germany – 5 February 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 650 V ...
Read moreFeb 1, 2021: STMicroelectronics’ 800V 8H Triacs operate at full rated current up to the maximum junction temperature of 150°C, ...
Read moreMunich, Germany – 29 October 2020 – Contemporary power system designs demand high power density levels and small form factors ...
Read moreMunich, Germany – 30 July, 2020 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a new IGBT power module tailored ...
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