Infineon’s SiC Power Semiconductors Power Toyota’s New bZ4X EV
Munich, Germany and Tokyo, Japan – 9 February 2026 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) today announced that ...
Read moreDetailsMunich, Germany and Tokyo, Japan – 9 February 2026 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) today announced that ...
Read moreDetailsAs power electronics shift toward SiC and GaN, complexity is moving from devices to the system level. In this interview ...
Read moreDetailsTORRANCE, CA – November 27th, 2025 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon ...
Read moreDetailsHigh-efficiency GaN power integrated technology tailored for motor drives in white goods and factory automation November 27, 2025 – STMicroelectronics (NYSE: STM), a ...
Read moreDetailsEliminate the need for complex and expensive device threshold voltage matching Nijmegen, September 30, 2025: Nexperia today introduced the latest ...
Read moreDetailsNew professorship to accelerate wide bandgap semiconductor research and train next-generation talent for the global energy transition Hamburg, Germany – ...
Read moreDetailsEnable high efficiency power conversion in energy-intensive AI server farms Nijmegen, July 10, 2025: Nexperia today announced the addition of two ...
Read moreDetailsHyeres, France – March 11, 2025 – Wise-integration, a pioneer in digital control of gallium nitride (GaN) and GaN ICs for power conversion, will unveil its ...
Read moreDetailsMunich, Germany – 30 January 2025 – As the world continues to face the challenges of climate change and environmental ...
Read moreDetailsMunich, Germany – 29 January 2025 – FORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET ...
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