Family includes 608 A half-bridge module with 2.4 mΩ RDSon and best-in-class thermal resistance December 10th, 2025, Lake Forest, CA ...
Read moreAugmenting Reliability and Performance in Mission-Critical Energy Infrastructure Applications New 3300V and 2300V SiC products based on latest GeneSiC™ Trench-Assisted ...
Read moreAEC-Q101-qualified SMD devices combine unmatched thermal stability and easy assembly Nijmegen, May 06, 2025: Nexperia today announced a range of ...
Read moreMunich, Germany - March 5, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in ...
Read morePlano, Texas – June 27, 2023 – Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced a further enhancement of its wide-bandgap ...
Read moreDULLES, VA, June 04, 2021 — GeneSiC’s next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality ...
Read moreComprehensive portfolio of wide bandgap devices for high-performance charging solutions APEC 2021 - PHOENIX, Ariz. – June 7, 2021 – ...
Read moreDULLES, VA, February 12, 2020 — GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to ...
Read moreSuperior switching and improved reliability deliver power density improvements in a variety of challenging applications PHOENIX, Ariz. – Feb. 17, ...
Read moreDULLES, VA, February 12, 2020 — GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to ...
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