Infineon expands supplier base for SiC wafers with US-based II-VI Incorporated
Munich, Germany – 23 August 2022 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and II-VI Incorporated (Nasdaq: IIVI) ...
Read moreDetailsMunich, Germany – 23 August 2022 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and II-VI Incorporated (Nasdaq: IIVI) ...
Read moreDetailsStrengthens onsemi's ability to drive innovation and to invest in disruptive, high-growth technologies Accelerates onsemi's silicon carbide (SiC) capabilities to ...
Read moreDetailsSilicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density New ...
Read moreDetailsThe coming years will see the market for electronic devices and logic boards grow by additional leaps and bounds. But ...
Read moreDetailsTOKYO, Dec 10, 2020 - Silicon carbide epitaxial wafers (SiC epi-wafers), the main material for power semiconductors, with a diameter ...
Read moreDetailsMAY 7, 2019 Expansion to generate up to a 30-fold increase in SiC wafer fabrication capacity and 30-fold increase in ...
Read moreDetailsMunich, Germany – 7 May 2018 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) enters high volume production of ...
Read moreDetailsMay 7th, 2018, Princeton, New Jersey and Nuremberg, Germany: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has added ...
Read moreDetailsAI-based solution to hidden inverter challenges also suits Solar, Wind & Traction applications above 100kW May 07 2019, PCIM Exhibition, ...
Read moreDetails700 Volt (V) MOSFETs and 700 V and 1200 V Schottky Barrier Diodes (SBDs) extend customer options as demand grows ...
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